| Electronic Components Datasheet Search |
|
ISB3008 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
ISB3008 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() ISB3008 eq ZTX605 Silicon NPN Power Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 10 -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 -- V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 140 -- V ICBO Collector Cutoff Current VCB = 120V; IE= 0 -- 0.01 uA IEBO Emitter Cutoff Current VEB = 8V; IC= 0 -- 0.1 uA VCE(sat) Collector-Emitter Saturation Voltage IC= 250mA; IB= 0.25mA -- 1.0 V IC= 1A; IB= 1mA -- 1.5 V VBE(sat) Base -Emitter Saturation Voltage IC= 1A; IB= 1mA -- 1.8 V VBE(on) Base-EmitterTurn-On Voltage IC= 1A; VCE = 5V -- 1.7 V hFE DC Current Gain IC= 50mA; VCE= 5V 2000 -- IC= 500mA; VCE= 5V 5000 -- IC= 1A; VCE= 5V 2000 10000 IC= 2A; VCE= 5V 500 -- |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |