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ISB3011 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISB3011 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISB3011 eq ZTX705 Silicon PNP Power Transistor www.iscsemi.com 2023-9-20 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= -100uA; IC= 0 -10 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC=-10mA; IB= 0 -120 -- -- V V(BR)CBO Collector-Base Breakdown Voltage IC= -100uA; IE= 0 -140 -- -- V ICBO Collector Cutoff Current VCB = -120V; IE= 0 -- -- -0.1 uA IEBO Emitter Cutoff Current VEB = -8V; IC= 0 -- -- -0.1 uA VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -- -- -1.3 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA -- -- -2.5 V VBE(sat) Base -Emitter Saturation Voltage IC= -1A; IB= -10mA -- -- -1.8 V VBE(on) Base-Emitter Turn-On Voltage IC= -1A;VCE= -5V -- -- -1.7 V hFE DC Current Gain IC= -10mA; VCE= -5V 3000 -- -- hFE DC Current Gain IC= -100mA; VCE= -5V 3000 hFE DC Current Gain IC= -1A; VCE= -5V 3000 -- hFE DC Current Gain IC= -2A; VCE= -5V 2000 -- |
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