Philips Semiconductors

Product specification

Rectifier diodes

BYV72EF series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• Reverse surge capability

• High thermal cycling performance

I

• Isolated mounting tab

I

t

GENERAL DESCRIPTION

PINNING

SOT199

Dual, ultra-fast, epitaxial rectifier

PIN

DESCRIPTION

diodes intended for use as output

rectifiers in high frequency switched

1

anode 1 (a)

mode power supplies.

2

cathode (k)

The BYV72EF series is supplied in

the conventional leaded SOT199

3

anode 2 (a)

package.

tab

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV72EF

-150

-200

V

RRM

Peak repetitive reverse voltage

-

150

200

V

V

RWM

Crest working reverse voltage

-

150

200

V

V

R

Continuous reverse voltage

T

-

150

200

V

I

O(AV)

Average rectified output current square wave

-

20

A

(both diodes conducting)

1

δ = 0.5; T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RWM(max)

I

RRM

Repetitive peak reverse current t

-

0.2

A

per diode

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current per diode

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

k

a1

a2

13

2

12

3

case

1 Neglecting switching and reverse current losses.

July 1998

1

Rev 1.100