Philips Semiconductors

Product specification

Rectifier diodes

BYV72EW series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

I

t

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Dual, ultra-fast, epitaxial rectifier

PIN

DESCRIPTION

diodes intended for use as output

rectifiers in high frequency switched

1

anode 1

mode power supplies.

2

cathode

The BYV72EW series is supplied in

the conventional leaded SOT429

3

anode 2

(TO247) package.

tab

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV72EW

-150

-200

V

RRM

Peak repetitive reverse voltage

-

150

200

V

V

RWM

Crest working reverse voltage

-

150

200

V

V

R

Continuous reverse voltage

T

-

150

200

V

I

O(AV)

Average rectified output current square wave

-

30

A

(both diodes conducting)

1

δ = 0.5; T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RWM(max)

I

RRM

Repetitive peak reverse current t

-

0.2

A

per diode

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current per diode

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

1 Neglecting switching and reverse current losses.

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge

Human body model;

-

8

kV

capacitor voltage

C = 250 pF; R = 1.5 k

Ω

k

a1

a2

13

2

2

3

1

October 1998

1

Rev 1.200