Electronic Components Datasheet Search
  English  ▼

X  

NGP15N41CL Datasheet(PDF) 2 Page - ON Semiconductor

Part # NGP15N41CL
Description  Ignition IGBT 15 Amps, 410 Volts
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGP15N41CL Datasheet(HTML) 2 Page - ON Semiconductor

  NGP15N41CL Datasheet HTML 1Page - ON Semiconductor NGP15N41CL Datasheet HTML 2Page - ON Semiconductor NGP15N41CL Datasheet HTML 3Page - ON Semiconductor NGP15N41CL Datasheet HTML 4Page - ON Semiconductor NGP15N41CL Datasheet HTML 5Page - ON Semiconductor NGP15N41CL Datasheet HTML 6Page - ON Semiconductor NGP15N41CL Datasheet HTML 7Page - ON Semiconductor NGP15N41CL Datasheet HTML 8Page - ON Semiconductor NGP15N41CL Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
NGD15N41CL, NGB15N41CL, NGP15N41CL
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C
EAS
250
200
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.4
°C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
RθJA
100
D2PAK (Note 1)
RθJA
50
TO−220
RθJA
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
IC = 2.0 mA
TJ = −40°C to
150°C
380
410
440
VDC
IC = 10 mA
TJ = −40°C to
150°C
380
410
440
Zero Gate Voltage Collector Current
ICES
VCE = 350 V,
VGE = 0 V
TJ = 25°C
−
2.0
20
μADC
TJ = 150°C
−
10
40*
TJ = −40°C
−
1.0
10
Reverse Collector−Emitter Leakage Current
IECS
VCE = −24 V
TJ = 25°C
−
0.7
2.0
mA
TJ = 150°C
−
12
25*
TJ = −40°C
−
0.1
1.0
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
TJ = 25°C
27
33
37
VDC
TJ = 150°C
30
36
40
TJ = −40°C
25
31
35
Gate−Emitter Clamp Voltage
BVGES
IG = 5.0 mA
TJ = −40°C to
150°C
11
13
15
VDC
Gate−Emitter Leakage Current
IGES
VGE = 10 V
TJ = −40°C to
150°C
384
640
1000
μADC
Gate Resistor
RG
−
TJ = −40°C to
150°C
−
70
−
Ω
Gate Emitter Resistor
RGE
−
TJ = −40°C to
150°C
10
16
26
k
Ω
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
TJ = 25°C
1.1
1.4
1.9
VDC
TJ = 150°C
0.75
1.0
1.4
TJ = −40°C
1.2
1.6
2.1*
Threshold Temperature Coefficient
(Negative)
−
−
−
−
3.4
−
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.



Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com