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BYW29E-150 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYW29E-150 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes BYW29E series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.895 V • Reverse surge capability • High thermal cycling performance I F(AV) = 8 A • Low thermal resistance I RRM ≤ 0.2 A t rr ≤ 25 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYW29E series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYW29E -150 -200 V RRM Peak repetitive reverse - 150 200 V voltage V RWM Working peak reverse - 150 200 V voltage V R Continuous reverse voltage - 150 200 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 128 ˚C - 8 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 128 ˚C - 16 A current I FSM Non-repetitive peak forward t = 10 ms - 80 A current t = 8.3 ms - 88 A sinusoidal; with reapplied V RRM(max) I RRM Peak repetitive reverse t p = 2 µs; δ = 0.001 - 0.2 A surge current I RSM Peak non-repetitive reverse t p = 100 µs - 0.2 A surge current T j Operating junction - 150 ˚C temperature T stg Storage temperature - 40 150 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω k a 12 1 tab 2 November 1998 1 Rev 1.300 |
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