TIP126 datasheet(1/7 Pages) ONSEMI

Part #	TIP126

Description	Plastic Medium-Power Complementary Silicon Transistors

PDF	7 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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September, 2005 − Rev. 6

1

Publication Order Number:

TIP120/D

TIP120, TIP121, TIP122

(NPN); TIP125, TIP126,

TIP127 (PNP)

Preferred Devices

Plastic Medium−Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

hFE

= 2500 (Typ) @ IC

= 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125

= 80 Vdc (Min) − TIP121, TIP126

= 100 Vdc (Min) − TIP122, TIP127

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

= 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

MARKING

DIAGRAM

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

http://onsemi.com

1

2

3

4

TIP12x

= Device Code

x

= 0, 1, 2, 5, 6, or 7

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

TIP12xG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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Manufacturer	Part #	Datasheet	Description
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STMicroelectronics	TIP126	53Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000
Samsung semiconductor	TIP126	242Kb / 6P	PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

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