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BYX133G Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYX133G
Description  High-voltage car ignition diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX133G Datasheet(HTML) 2 Page - NXP Semiconductors

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2000 Feb 29
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
BYX133G
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AB2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
The BYX133G is marked with a brown cathode band on
the body.
handbook, halfpage
ka
MBK909
Fig.1 Simplified outline (SOD61AB2) and symbol.
Fig.0 Simplified outline (SOD61AB2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
3kV
VRWM
crest working reverse voltage
−
3kV
IF(AV)
average forward current
−
50
mA
IRSM
non-repetitive peak reverse current
t = 100
µs triangular pulse;
Tj max prior to surge
−
50
mA
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
continuous
−
175
°C
Tj
junction temperature
max. 30 min.
−
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
3.75
5.25
V
V(BR)R
reverse avalanche breakdown voltage
IR = 100 µA
4
5.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
−
30
µA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
Tamb =Tleads; lead length = 10 mm
90
K/W



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