BP2513D

Non-Isolated CCCV Driver IC

BP2513D_EN_DS_Rev.1.0

www.bpsemi.com

4

BPS Confidential – Customer Use Only

晶丰明源半导体

Electrical Characteristics (Notes 4, 5) (Unless otherwise specified, VCC=16V and TA=25 ℃)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Supply Voltage Section

VCC_CLAMP

VCC Clamp Voltage

5mA

27

V

VCC_ON

VCC Turn On Threshold

VCC Rising

15.3

V

VCC_UVLO

VCC Turn Off Threshold

VCC Falling

7.6

V

IST

VCC Startup Current

VCC= VCC-ON - 1V

120

uA

IOP

VCC Operating Current

VFB=3V,VCS=0

240

uA

Current Sense Section

VCS_TH

CS Peak Threshold

600

mV

TLEB

Leading Edge Blanking

350

ns

Feedback Section

VFB_EA_REF

Internal EA Reference

Voltage

3

V

VFB_OVP

FB OVP Threshold

4

V

VFB_DEM

FB ZCD Threshold

0.1

V

VFB_SHORT

Output short protection

Threshold

0.5

V

FOSC_SHORT

Clamp frequency for

output short

20

kHz

TSAMPLE_BIG

Samples time

VCS_TH =600mV

5.8

us

TOFF_MAX

Max. OFF time

Guaranteed by

design

1

ms

TON_MAX

Max. ON time

40

us

Power MOSFET

RDS_ON

Static Drain-source On-

resistance

VGS=10V/IDS=0.5

A

10

Ω

BVDSS

Drain-Source

Breakdown Voltage

VGS=0V/IDS=250u

A

500

V

IDSS

Power MOSFET Drain

Leakage Current

VGS=0V/VDS=500

V

1

uA

Thermal Regulation Section

TSD

Thermal shunt down

Guaranteed by

design

150

℃

Note 4: production testing of the chip is performed at 25°C.

Note 5: the maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed by design, characterization and statistical

analysis