BZD142W datasheet(3/8 Pages) PHILIPS

3 / 8 page

2001 Oct 10

Philips Semiconductors

Product speciﬁcation

ZenBlockTM; zener with

integrated blocking diode

BZD142W

ELECTRICAL CHARACTERISTICS ZENER/TVS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.

2. Non-repetitive peak reverse current in accordance with

“IEC 60060-1, Section 8” (10/1000

µs pulse); see Fig.5.

ELECTRICAL CHARACTERISTICS BLOCKING DIODE

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.4.

For more information please refer to the

“General Part of associated Handbook”.

TYPE

NUMBER

SUFFIX(1)

WORKING VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE CURRENT

at STAND-OFF

VOLTAGE

VZ (V) at Itest

SZ (%/K) at Itest

Itest (mA)

V(CL)R

(V)

at IRSM

(A)(2)

IR (µA)

at VR (V)

MIN.

NOM.

MAX.

MIN.

MAX.

0.07

0.12

106

0.94

100

110

0.07

0.12

139

0.72

160

149

160

171

0.07

0.12

224

0.45

130

180

162

180

198

0.07

0.12

250

0.40

150

200

180

200

220

0.07

0.12

277

0.36

160

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

700

−−

reverse current

VR = 600 V

−−

µA

VR = 600 V; Tj = 150 °C

−−

100

µA

diode capacitance

f = 1 MHz; VR =0V;

see Fig.3

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

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