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BZD23 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BZD23
Description  Voltage regulator diodes
PDF  9 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZD23 Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD23 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
™(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM248
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ptot
total power dissipation
Ttp =25 °C; lead length 10 mm;
see Figs 2 and 3
BZD23-C3V6 to -C6V8
−
2.0
W
BZD23-C7V5 to -C510
−
2.5
W
Ptot
total power dissipation
Tamb =55 °C; see Figs 2 and 3;
PCB mounted (see Fig.7)
BZD23-C3V6 to -C6V8
−
1.0
W
BZD23-C7V5 to -C510
−
1.0
W
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 µs; square pulse;
Tj =25 °C prior to surge; see Figs 4 and 5
BZD23-C3V6 to -C6V8
−
300
W
BZD23-C7V5 to -C510
−
300
W
PRSM
non-repetitive peak reverse
power dissipation
10/1000
µs exponential pulse (see Fig.8);
Tj =25 °C prior to surge
BZD23-C7V5 to -C510
−
150
W
Tstg
storage temperature
BZD23-C3V6 to -C6V8
−65
+200
°C
BZD23-C7V5 to -C510
−65
+175
°C
Tj
junction temperature
BZD23-C3V6 to -C6V8
−65
+200
°C
BZD23-C7V5 to -C510
−65
+175
°C



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