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BZD27 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BZD27 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes BZD27 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 3.6 to 270 V for 46 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Supplied in 8 mm embossed tape. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD87) and symbol. handbook, 4 columns MAM249 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation Ttp = 105 °C; see Figs 2 and 3 BZD27-C3V6 to -C6V8 − 1.7 W BZD27-C7V5 to -C510 − 2.3 W Ptot total power dissipation PCB mounted (see Fig.7) BZD27-C3V6 to -C6V8 Tamb =60 °C; see Fig.2 − 0.8 W BZD27-C7V5 to -C510 Tamb =55 °C; see Fig.3 − 0.8 W PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square pulse; Tj =25 °C prior to surge; see Figs.4 and 5 BZD27-C3V6 to -C6V8 − 300 W BZD27-C7V5 to -C510 − 300 W PRSM non-repetitive peak reverse power dissipation 10/1000 µs exponential pulse (see Fig.8); Tj =25 °C prior to surge BZD27-C7V5 to -C510 − 150 W Tstg storage temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C Tj junction temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C |
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