AP2210 datasheet(8/22 Pages) BCDSEMI

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300mA RF ULDO REGULATOR

AP2210

Data Sheet

Mar. 2007 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Enable Input Logic-low Voltage

VIL

Regulator shutdown

0.4

0.18

Enable Input Logic-high Voltage

VIH

Regulator enabled

2.0

Enable Input Logic-low Current

IIL

VIL≤0.4V

0.01

µA

VIL≤0.18V

Enable Input Logic-high Current

IIH

VIL≥2.0V

µA

VIL≥2.0V

Note 2: Specifications in bold type are limited to -40oC

≤T

J≤125

oC. Limits over temperature are guaranteed by design, but not

tested in production.

Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature

range.

Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load

regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25

oC) or 2% (-

40oC

≤T

J≤125

oC) below its nominal value measured at 1V differential.

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the

supply is the sum of the load current plus the ground pin current.

VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25

oC, Bold typeface applies over -40oC

≤T

J≤125

oC (Note 2),

unless otherwise specified.

AP2210-2.8 Electrical Characteristics

Electrical Characteristics (Continued)

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