ED1502 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

ED1502

THERMAL CHARACTERISTICS

Note

1. Refer to TO-92; SOT54 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =40V

−−

µA

IE = 0; VCB = 20 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

µA

hFE

DC current gain

IC = 7 mA; VCE =10V

ED1502B

−

ED1502C

−

100

ED1502D

−

127

ED1502E

105

−

210

VBE

base-emitter voltage

IC = 7 mA; VCE = 10 V; note 1

−−

925

Cre

feedback capacitance

IC =ic = 0; VCB = 10 V; f = 1 MHz

−

0.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

361

−

825

MHz

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