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ED1602 Datasheet(PDF) 2 Page - NXP Semiconductors |
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ED1602 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistor ED1602 FEATURES • Low current (max. 100 mA) • Low voltage (max. 20 V). APPLICATIONS • Audio pre-amplifiers and driver stages • FM multiplex stereo decoders • Small-signal circuits in television receivers • Medium speed switching. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: ED1402. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM281 3 2 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−25 V VCEO collector-emitter voltage open base −−20 V VEBO emitter-base voltage open collector −−4V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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