ED1702 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

ED1702

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

200

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

100

IE = 0; VCB = 20 V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

500

hFE

DC current gain

IC = 500 mA; VCE =1V

−

IC = 100 mA; VCE = 1 V

132

476

hFE

DC current gain

IC = 100 mA; VCE =1V

ED1702L

132

189

ED1702M

170

233

ED1702N

213

300

ED1702O

263

370

ED1702P

333

476

VCEsat

collector-emitter saturation voltage

IC = 500 mA; IB = 50 mA; note 1

−

700

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

6pF

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

−

MHz

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