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ISB3014 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISB3014
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3014 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISB3014
eq 2SC5570
isc Silicon NPN Power Transistor
www.iscsemi.com
2023-10-10
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO= 800V(Min)
APPLICATIONS
·
Designed for power amplifier
·
high speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
28
A
IB
Base Current-Continuous
14
A
PC
Collector Power Dissipation
220
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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