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ISG2014 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISG2014 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() ISG2014 eq FGA25N120AN IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.4 ℃ /W Rth j-c Thermal Resistance,Junction to Ambient 40 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE=0; IC= 3mA 1200 -- -- V VGE(TH) Gate-Emitter Threshold Voltage VGE= VCE; IC=25mA 3.5 5.5 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 25A; VCE= 15V, TC=25℃ -- 2.5 3.2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 25A; VCE= 15V, TC=125℃ -- 2.9 -- V VCE(sat) Collector-Emitter Saturation Voltage IC= 40A; VCE= 15V, TC= 25℃ -- 3.1 -- V ICES Zero Gate Voltage Collector Current VCE= 1200V; VGE=0 -- -- 3 mA IGES Gate-Emitter Leakage Current VGE=±20V; VCE=0 -- -- ± 100 nA Cies Input Capacitance VGS = 0V, VCS = 30V, f = 1.0MHz -- 2200 -- pF Coes Output Capacitance -- 180 -- Cres Reverse Transfer Capacitance -- 90 -- Qg Total Gate Charge VGE = 15V, IC= 25A, VCE = 600V -- 205 300 nC Qgs Gate-Source Charge -- 18 23 Qgd Gate-Drain Charge -- 110 160 |
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