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ISG2012 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2012
Description  Trench gate Field-Stop IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2012 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2012 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2012 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2012 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2012
eq STGW40H120DF2
Trench gate Field-Stop IGBT
www.iscsemi.com
2023-10-16
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.32
℃
/W
Rth j-c
Thermal Resistance,Junction to Case diode
1.3
℃
/W
Rth j-a
Thermal Resistance,Junction to ambient
40
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 1mA
1200
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
4.5
5.2
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 40A; VCE= 15V,
TC=25℃
--
2.1
2.5
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V; VGE=0
--
--
25
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
250
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
1680
--
pF
Coes
Output Capacitance
--
260
--
Cres
Reverse Transfer Capacitance
--
120
--
Qg
Total Gate Charge
VGE = 15V,
IC= 40A,
VCE = 960V
--
210
--
nC
Qgs
Gate-Source Charge
--
34
--
Qgd
Gate-Drain Charge
--
105
--



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