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TPH5200FNH Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TPH5200FNH Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISFM1027 eq TPH5200FNH N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V; ID= 10mA 250 -- -- V VGS(th) Gate Threshold Voltage VDS = 10V, ID = 1.0mA 2.0 -- 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=13A -- -- 52 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 -- -- ± 1 μA IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0 -- -- 10 μA VSD Diode Forward Voltage ISD= 26A; VGS= 0V -- 1.2 -- V Package Dimensions (UNIT: MM): |
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