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LM567C Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM567C Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 12 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage Pin 9V Power Dissipation (Note 2) 1100 mW V 8 15V V 3 −10V V 3 V 4 + 0.5V Storage Temperature Range −65˚C to +150˚C Operating Temperature Range LM567H −55˚C to +125˚C LM567CH, LM567CM, LM567CN 0˚C to +70˚C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260˚C Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Electrical Characteristics AC Test Circuit, T A = 25˚C, V + =5V Parameters Conditions LM567 LM567C/LM567CM Units Min Typ Max Min Typ Max Power Supply Voltage Range 4.75 5.0 9.0 4.75 5.0 9.0 V Power Supply Current Quiescent R L = 20k 6 8 7 10 mA Power Supply Current Activated R L = 20k 11 13 12 15 mA Input Resistance 18 20 15 20 k Ω Smallest Detectable Input Voltage I L = 100 mA, fi =fo 20 25 20 25 mVrms Largest No Output Input Voltage I C = 100 mA, fi =fo 10 15 10 15 mVrms Largest Simultaneous Outband Signal to Inband Signal Ratio 66 dB Minimum Input Signal to Wideband Noise Ratio B n = 140 kHz −6 −6 dB Largest Detection Bandwidth 12 14 16 10 14 18 % of f o Largest Detection Bandwidth Skew 1 2 2 3 % of f o Largest Detection Bandwidth Variation with Temperature ±0.1 ±0.1 %/˚C Largest Detection Bandwidth Variation with Supply Voltage 4.75–6.75V ±1 ±2 ±1 ±5%V Highest Center Frequency 100 500 100 500 kHz Center Frequency Stability (4.75–5.75V) 0 < T A < 70 −55 < T A < +125 35 ± 60 35 ± 140 35 ± 60 35 ± 140 ppm/˚C ppm/˚C Center Frequency Shift with Supply Voltage 4.75V–6.75V 4.75V–9V 0.5 1.0 2.0 0.4 2.0 2.0 %/V %/V Fastest ON-OFF Cycling Rate f o/20 f o/20 Output Leakage Current V 8 = 15V 0.01 25 0.01 25 µA Output Saturation Voltage e i = 25 mV, I8 =30mA e i = 25 mV, I8 = 100 mA 0.2 0.6 0.4 1.0 0.2 0.6 0.4 1.0 V Output Fall Time 30 30 ns Output Rise Time 150 150 ns Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 2: The maximum junction temperature of the LM567 and LM567C is 150˚C. For operating at elevated temperatures, devices in the TO-5 package must be derated based on a thermal resistance of 150˚C/W, junction to ambient or 45˚C/W, junction to case. For the DIP the device must be derated based on a thermal resistance of 110˚C/W, junction to ambient. For the Small Outline package, the device must be derated based on a thermal resistance of 160˚C/W, junction to ambient. Note 3: Refer to RETS567X drawing for specifications of military LM567H version. www.national.com 2 |
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