650V 20A SiC Schottky Diode – SiS650S20AS

Silicon Carbide Schottky Barrier Rectifier diode in bare die form



Capable of high temperature operation >= 175°C



High Frequency Operation



High Surge Current Capability



No Reverse Recovery / No Forward Recovery



Positive Temperature Coefficient

Rev 1.0

30/10/23

Features:

Die Dimensions in µm (mils)

1900 (75)

2750 (108)

ANODE



“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.



No suffix - MIL-STD-750 /2073 Visual Inspection

The following part suffixes apply:

FIGURE 6. Non-repetitive Peak Forward Surg

Versus Pulse Duration

Ordering Information

www.siliconsupplies.com\quality\bare-die-lot-qualification

CHIP BACKSIDE IS CATHODE

2750 x 2750

108 x 108

Die Size (Unsawn)

µm

mils

Anode Pad Size

1900 x 1900

75 x 75

µm

mils

Die Thickness

350 (±20)

13.78 (0.79)

µm

mils

Top Metal Composition

Al 4µm

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (100 per tray capacity)



Sawn Wafer on Tape – By specific request



Unsawn Wafer – By specific request



With additional electrical selection – By specific request

Back Metal Composition

Ag 0.4µm

Page 1 of 3

www.siliconsupplies.com