eq 2N6042G

isc Silicon PNP Power Transistor

www.iscsemi.com

2023-9-12

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -30mA, IB= 0

-100

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A, IB= -12mA

-2.0

V

VCE(sat)-2

Collector-Emitter Saturation voltage

IC= -8A, IB= -80mA

-4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -8A, IB= -80mA

-4.5

V

VBE(on)

Base-Emitter On Voltage

IC= -4A; VCE= -4V

-2.8

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-0.5

mA

ICEO

Collector Cutoff Current

VCE= -50V; IB= 0

-0.5

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2.0

mA

hFE-1

DC Current Gain

IC= -3A; VCE= -4V

1000

20000

hFE-2

DC Current Gain

IC= -8A; VCE= -4V

100

COB

Output Capacitance

IE= 0; VCB= -10V,f= 0.1MHz

300

pF

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

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