NJ30 datasheet(1/1 Pages) INTERFET

Part #	NJ30

Description	Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	INTERFET [InterFET Corporation]

Direct Link	http://www.interfet.com

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1 / 1 page

F-14

01/99

NJ30 Process

Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

This process available for customer-specified

applications.

At 25°C free air temperature:

NJ30 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 30

– 40

V

IG = – 1 µA, VDS = ØV

Reverse Gate Leakage Current

IGSS

– 10

– 100

pA

VGS = – 20V, VDS = ØV

Drain Saturation Current (Pulsed)

IDSS

222

mA

VDS = 15V, VGS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 1

– 5

V

VDS = 15V, ID = 1 nA

Dynamic Electrical Characteristics

Forward Transconductance

gfs

6mS

VDS = 15V, VGS = ØV

f = 1 kHz

Input Capacitance

Ciss

4.3

5

pF

VDS = 15V, VGS = ØV

f = 1 MHz

Feedback Capacitance

Crss

1

1.5

pF

VDS = 15V, VGS = ØV

f = 1 MHz

Equivalent Noise Voltage

¯eN

4

nV/

√HZ V

DS = 10 V, ID = 5 mA

f = 1 kHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

G

S-D

Die Size = 0.016" X 0.016"

All Round Bond Pads = 0.0028"

All Square Bond Pads = 0.004"

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-14

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