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NJ36D Datasheet(PDF) 1 Page - InterFET Corporation |
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NJ36D Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 2 page  F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Devices in this Databook based on the NJ36D Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 At 25°C free air temperature: NJ36D Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 35 V IG = – 1 mA, VDS = ØV Reverse Gate Leakage Current IGSS 0.05 0.1 nA VGS = – 15V, VDS = ØV Drain Saturation Current (Pulsed) IDSS 140 mA VDS = 15V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 8 V VDS = 15V, ID = 1 nA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 90 250 Ω ID = Ø mA, VGS = ØV f = 1 kHz Forward Transconductance gfs 8.5 mS VDS = 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 5.5 7.0 pF VDS = 10V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1.5 3 pF VDS = 10V, VGS = ØV f = 1 MHz Equivalent Noise Voltage ¯eN 5 nV/ √HZ V DS = 15 V, ID = 5 mA f = 1 kHz Differential Gate Source Voltage VGS1–VGS2 5 20 100 mV VDG = 15V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substrate is also Gate. S S D D G G Databook.fxp 1/13/99 2:09 PM Page F-22 |
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