NJ42 datasheet(1/2 Pages) INTERFET

Part #	NJ42

Description	Silicon Junction Field-Effect Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	INTERFET [InterFET Corporation]

Direct Link	http://www.interfet.com

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1 / 2 page

F-24

01/99

NJ42 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

¥ High Breakdown Voltage

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the NJ42 Process.

Datasheet

2N6449, 2N6450

IFN6449, IFN6450

At 25°C free air temperature:

NJ42 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 300

– 400

V

IG = 1 µA, VDS = ØV

Reverse Gate Leakage Current

IGSS

– 1

– 10

nA

VGS = – 150V, VDS = ØV

Drain Saturation Current (Pulsed)

IDSS

210

mA

VDS = 30V, VGS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 2

– 12

V

VDS = 30V, ID = 1 nA

Dynamic Electrical Characteristics

Forward Transconductance

gfs

800

µS

VDS = 30V, VGS = ØV

f = 1 kHz

Input Capacitance

Ciss

610

pF

VDS = 30V, VGS = ØV

f = 1 MHz

Feedback Capacitance

Crss

25

pF

VDS = 30V, VGS = ØV

f = 1 MHz

Equivalent Noise Voltage

¯eN

10

nV/

√HZ V

DS = 15 V, VGS = Ø V

f = 1 kHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

S

D

S

Die Size = 0.032" X 0.032"

All Bond Pads = 0.004", Dia.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-24

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