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NJ132 Datasheet(PDF) 1 Page - InterFET Corporation |
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NJ132 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 2 page  F-32 01/99 NJ132 Process Silicon Junction Field-Effect Transistor ¥ High Speed Switch ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Devices in this Databook based on the NJ132 Process. Datasheet 2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A Datasheet 2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113 At 25°C free air temperature: NJ132 Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 30 – 45 V IG = – 1 µA, VDS = ØV Reverse Gate Leakage Current IGSS – 10 – 100 pA VGS = – 20V, VDS = ØV Drain Saturation Current (Pulsed) IDSS 10 150 mA VDS = 20V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 7 V VDS = 20V, ID = 1 nA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 25 Ω ID = 1 mA, VGSS = ØV f = 1 kHz Input Capacitance Ciss 12 pF VDS = 20V, VGS = ØV f = 1 MHz Feedback Capacitance Ciss 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn On Delay Time td(on) 6ns VDD = – 10V, ID = 10 mA Rise Time tr 5ns RL = 10V, VGS(ON) = ØV Turn Off Delay Time td(off) 50 ns VGS(OFF) = – 6V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G G S-D S-D Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. Databook.fxp 1/13/99 2:09 PM Page F-32 |
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