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NJ450 Datasheet(PDF) 1 Page - InterFET Corporation

Part # NJ450
Description  Silicon Junction Field-Effect Transistor
PDF  2 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

NJ450 Datasheet(HTML) 1 Page - InterFET Corporation

  NJ450 Datasheet HTML 1Page - InterFET Corporation NJ450 Datasheet HTML 2Page - InterFET Corporation  
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F-36
01/99
NJ450 Process
Silicon Junction Field-Effect Transistor
¥ LOW R(on) Switch
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450 Process.
Datasheet
2SK363
IFN146, IFN147
IFN363
J108, J109
J110, J110A
At 25°C free air temperature:
NJ450 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
– 30
V
IG = – 1 µA, VDS = ØV
Reverse Gate Leakage Current
IGSS
– 50
– 1000
pA
VGS = – 15V, VDS = ØV
Drain Saturation Current (Pulsed)
IDSS
5
600
mA
VDS = 15V, VGS = ØV
Gate Source Cutoff Voltage
VGS(OFF)
– 0.1
– 10
V
VDS = 15V, ID = 1 nA
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
7
Ω
ID = 1 mA, VGS = ØV
f = 1 kHz
Forward Transconductance
gfs
250
mS
VDS = 15V, VGS = ØV
f = 1 kHz
Input Capacitance
Ciss
20
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Crss
10
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
G
S-D
S-D
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-36


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