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NJ903 Datasheet(PDF) 1 Page - InterFET Corporation |
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NJ903 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 2 page  F-40 01/99 NJ903 Process Silicon Junction Field-Effect Transistor ¥ Analog Switch ¥ Digital Switch ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Devices in this Databook based on the NJ903 Process. Datasheet IFN5432 IFN5433 IFN5434 At 25°C free air temperature: NJ903 Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 40 V IG = – 1 µA, VDS = ØV Reverse Gate Leakage Current IGSS – 0.1 – 1 nA VGS = – 15V, VDS = ØV Drain Saturation Current (Pulsed) IDSS 100 900 mA VDS = 10V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) – 2 – 7 V VDS = 10V, ID = 1 nA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 Ω ID = 1 mA, VGS = Ø f = 1 kHz Input Capacitance Ciss 45 pF VDS = ØV, VGS = – 10V f = 1 MHz Feedback Capacitance Ciss 22 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn On Delay Time td(on) 7ns Rise Time tr 1ns VDD = 1.5V, ID(ON) = 30 mA Turn Off Delay Time td(off) 12 ns RL = 50 Ω, VGS(ON) = ØV Fall Time tf 2ns VGS(OFF) = – 7V 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G G S-D D-S S-D D-S Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. Databook.fxp 1/13/99 2:09 PM Page F-40 |
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