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ISG2019 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2019
Description  IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2019 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2019 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2019 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2019 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2019 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2019
eq FGL40N120AN
IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.25
℃
/W
Rth j-c
Thermal Resistance,Junction to Ambient
25
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 1mA
1200
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
3.5
5.5
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 40A; VCE= 15V,
--
2.6
3.2
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 40A; VCE= 15V,
TC=125℃
--
2.9
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 64A; VCE= 15V,
--
3.15
--
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V; VGE=0
--
--
1
mA
IGES
Gate-Emitter Leakage Current
VGE=±25V; VCE=0
--
--
±
250
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
3300
--
pF
Coes
Output Capacitance
--
380
--
Cres
Reverse Transfer Capacitance
--
130
--
Qg
Total Gate Charge
VGE = 15V,
IC= 40A,
VCE = 600V
--
225
330
nC
Qgs
Gate-Source Charge
--
28
38
Qgd
Gate-Drain Charge
--
135
195



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