UNIT

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● High forward surge capability

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

For use in general purpose rectification of power

supplies, inverters, converters, and freewheeling diodes for

consumer and telecommunication.

● Package: SMAF

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Polarity: Cathode line denotes the cathode end

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(Ta=25 Unless otherwise specified)

PARAMETER

SYMBOL

UNIT

G1AFS

G1BFS

G1DFS

G1GFS

G1JFS

G1KFS

G1MFS

Device marking code

G1AFS

G1BFS

G1DFS

G1GFS

G1JFS

G1KFS

G1MFS

Repetitive peak reverse voltage

VRRM

V

50

100

200

400

600

800

1000

Average rectified output current

@60Hz sine wave, resistance load, TL (Fig.1)

IO

A

1.0

Surge(non-repetitive)forward current

@60Hz Half-sine wave,1 cycle, Ta=25

°C

IFSM

A

30

Storage temperature

Tstg

°C

-55~+150

Junction temperature

Tj

°C

-55~+150

■

(Ta=25°C Unless otherwise specified)

PARAMETER

SYMBOL

TEST

CONDITIONS

G1AFS G1BFS G1DFS G1GFS G1JFS

G1KFS G1MFS

Maximum instantaneous

forward voltage drop per diode

VF

V

IFM=1.0A

1.1

Maximum DC reverse current

at rated DC blocking voltage

per diode @VRM=VRRM

IRRM

μA

Ta=25°C

5.0

Ta=125°C

100

°C

Surface Mount General Purpose Rectifier

G1AFS Through G1MFS

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■

■

FEATURES

TYPICAL APPLICATIONS

MECHANICAL DATA

MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

S-S1314

07-13-2020

■

PARAMETER

SYMBOL

UNIT

G1AFS

G1BFS

G1DFS

G1GFS

G1JFS

G1KFS G1MFS

Thermal resistance

RθJ-A

°C/W

651)

RθJ-L

251)

THERMAL CHARACTERISTICS (Ta=25 Unless otherwise specified)

°C

Page 1 of 3

RFE International • Tel (949) 833-1988 • Fax (949) 833-1788 • E-mail sales@rfeinc.com

Note:

(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas