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ISG2026 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2026
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2026 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2026 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2026 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2026 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2026
eq IKB03N120H2
IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
2.0
℃
/W
Rth j-c
Thermal Resistance,Junction to Case diode
3.2
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.3mA
1200
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE; IC=0.09mA
2.1
3
3.9
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; VCE= 15V,
Tj=25℃
--
2.2
2.8
V
IC= 3A; VCE= 15V,
Tj=150℃
--
2.5
--
V
IC=3A; VCE= 10V,
Tj=25℃
--
2.4
--
V
ICES
Zero Gate Voltage Collector Current
VCE=1200V; VGE=0；
Tj=25℃
--
--
20
uA
VCE=1200V; VGE=0；
Tj=150℃
--
--
80
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
REVERSE DIODE (FRED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VF
Diode Forward Voltage
IF=2A;TJ=25℃
--
--
2.5
V
IF=30A;TJ=150℃
--
1.75
--
V
trr
Reverse Recovery Time
IF=3A;
-di/dt=1000A/us;
VR=800V;
VGE = 15V
--
53
--
ns
Qrr
Reverse recovery charge
--
384
--
nC
Irrm
Reverse recovery current
--
12.5
--
A



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