IRFP460 datasheet(5/7 Pages) PHILIPS

5 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistors

IRFP460

Avalanche energy rated

Fig.13. Typical turn-on gate-charge characteristics.

GS = f(QG); parameter VDS

Fig.14. Typical switching times; t

d(on), tr, td(off), tf = f(RG)

Fig.15. Normalised drain-source breakdown voltage;

(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)

Fig.16. Source-Drain diode characteristic.

F = f(VSDS); parameter Tj

Fig.17. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tp);

unclamped inductive load

Fig.18. Maximum permissible repetitive avalanche

current (I

AR) versus avalanche time (tp)

PHW20N50E

100

125

150

175

200

Gate charge, QG (nC)

Gate-source voltage, VGS (V)

ID = 20A

Tj = 25 C

VDD = 400 V

200V

300V

PHW20N50E

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2 1.3 1.4 1.5

Drain-Source Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

150 C

VGS = 0 V

PHW20N50E

100

200

300

400

500

600

Gate resistance, RG (Ohms)

Switching times, td(on), tr, td(off), tf (ns)

td(off)

tr, tf

td(on)

PHW20N50E

100

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Non-repetitive Avalanche current, IAS (A)

125 C

VDS

Tj prior to avalanche = 25 C

-100

-50

100

150

0.85

0.9

0.95

1.05

1.1

1.15

Tj, Junction temperature (C)

Normalised Drain-source breakdown voltage

V(BR)DSS @ Tj

V(BR)DSS @ 25 C

PHW20N50E

0.1

100

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Maximum Repetitive Avalanche Current, IAR (A)

125 C

Tj prior to avalanche = 25 C

September 1999

Rev 1.000

IRFP460 Datasheet(PDF) 5 Page - NXP Semiconductors

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