MMBTA42 datasheet(1/3 Pages) DIODES

Part #	MMBTA42

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMBTA42

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available

(MMBTA92)

•

Ideal for Low Power Amplification and Switching

•

Lead Free/RoHS Compliant (Note 4)

•

Qualified to AEC-Q101 Standards for High

Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method

208

•

Lead Free Plating (Matte Tin Finish annealed

over Alloy 42 leadframe).

•

Marking (See Page 2): K3M

•

Ordering & Date Code Information: See Page 2

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

A

E

J

L

TOP VIEW

M

B

C

B

H

G

D

K

E

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current (Note 1) (Note 3)

IC

500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage and Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

300

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

300

⎯

V

IC = 1.0mA, IB = 0

B

Emitter-Base Breakdown Voltage

V(BR)EBO

6.0

⎯

V

IE = 100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

100

nA

VCB = 200V, IE = 0

Collector Cutoff Current

IEBO

⎯

100

nA

VCE = 6.0V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

25

40

⎯

IC = 1.0mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 30mA, VCE = 10V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 20mA, IB = 2.0mA

B

Base- Emitter Saturation Voltage

VBE(SAT)

⎯

0.9

V

IC = 20mA, IB = 2.0mA

B

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Ccb

⎯

3.0

pF

VCB = 20V, f = 1.0MHz, IE = 0

Current Gain-Bandwidth Product

fT

50

⎯

MHz

VCE = 20V, IC = 10mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power

dissipation rating (Pd) and power derating curve (figure 1).

4. No purposefully added lead.

DS30062 Rev. 10 - 2

1 of 3

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