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ISG2021 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2021
Description  Field Stop and trench IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2021 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2021 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2021 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2021 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2021 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2021
eq NGTB75N65FL2WG
Field Stop and trench IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.28
℃
/W
Rth j-c
Thermal Resistance,Junction to Case DIODE
0.62
℃
/W
Rth j-c
Thermal Resistance,Junction to Ambient
40
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.5mA
650
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.35mA
4.5
5.5
6.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 75A; VCE= 15V
1.50
1.75
2.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=75A; VCE= 15V,
Tj=175℃
--
2.3
--
V
ICES
Zero Gate Voltage Collector Current
VCE= 650V; VGE=0
--
--
0.1
mA
ICES
Zero Gate Voltage Collector Current
VCE= 650V; VGE=0
--
--
4
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
200
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 20V,
f = 1.0MHz
--
7500
--
pF
Coes
Output Capacitance
--
300
--
Cres
Reverse Transfer Capacitance
--
190
--
Qg
Total Gate Charge
VGE = 15V,
IC= 50A,
VCE = 480V
--
310
--
nC
QGE
Gate-Emitter Charge
--
60
--
QGC
Gate-Collector Charge
--
150
--



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