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STGE200NB60S Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # STGE200NB60S
Description  IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STGE200NB60S Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  STGE200NB60S Datasheet HTML 1Page - Inchange Semiconductor Company Limited STGE200NB60S Datasheet HTML 2Page - Inchange Semiconductor Company Limited STGE200NB60S Datasheet HTML 3Page - Inchange Semiconductor Company Limited STGE200NB60S Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISGM2024
eq STGE200NB60S
IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case Max
0.21
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter
Breakdown
Voltage
VGE=0; IC= 0.25mA
600
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE; IC=0.25mA
3
--
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 100A; VCE= 15V,TJ=25℃
--
1.2
1.6
V
IC= 150A; VCE= 15V,
TJ=100℃
--
1.2
--
V
ICES
Zero Gate Voltage Collector Current
VCE=600V; VGE=0,TJ=25℃
--
--
0.5
mA
VCE=600V; VGE=0,TJ=125℃
--
--
5
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
1890
--
pF
Coes
Output Capacitance
--
1352
--
Cres
Reverse Transfer Capacitance
--
110
--
Qg
Total Gate Charge
VGE = 15V,
IC= 100A,
VCE = 480V
--
780
--
nC
Qgs
Gate-Source Charge
--
85
--
Qgd
Gate-Drain Charge
--
190
--



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