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JA101P Datasheet(PDF) 2 Page - NXP Semiconductors |
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JA101P Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1998 Aug 04 2 Philips Semiconductors Product specification PNP general purpose transistor JA101 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC501. PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM285 2 1 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−45 V ICM peak collector current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = −1 mA; VCE = −5 V 135 600 fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − MHz |
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