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VSC045N04MS Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # VSC045N04MS
Description  N-Channel 40 V (D-S) MOSFET
PDF  9 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VSC045N04MS Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 40 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
0.040
ID (A)
4.8
Configuration
Single
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
4.8
A
TC = 125 °C
3.6
Continuous Source Current (Diode Conduction)
IS
3.8
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
L = 0.1 mH
IAS
13
Single Pulse Avalanche Energy
EAS
8mJ
Maximum Power Dissipationa
TC = 25 °C
PD
3
W
TC = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mountb
RthJA
166
°C/W
Junction-to-Foot (Drain)
RthJF
50
VSC045N04MS
www.VBsemi.com
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
1
0.035
20
服务热线：400-655-8788


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