GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2A8
0.5 Watts, 20 Volts, Class A
Linear to 2000 MHz
GENERAL DESCRIPTION
The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts
of Class A, RF output power at 2000 MHz. This transistor is specifically
designed for general Class A amplifier applicatons. It utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness.
CASE OUTLINE
55EU, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
5.3 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
50 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
300 mA
Maximum Temperatures
Storage Temperature
- 65 to + 150 C
o
Operating Junction Temperature
+ 150 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
VSWR
1
Power Out @ 1db Comp. Pt.
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.0 GHz
Vcc = 20 Volts
Ic = 150mA
0.5
7.0
9.0
20
0.1
30:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
Hfe
Cob
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 10mA
Ic = 10 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
50
21
20
3.0
28
4.0
33
Volts
Volts
Volts
pF
C/W
o
Issue September 1995
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