KMZ10B datasheet(4/8 Pages) PHILIPS

4 / 8 page

1998 Mar 31

Philips Semiconductors

Product speciﬁcation

Magnetic ﬁeld sensor

KMZ10B

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C; Hx = 3 kA/m; note 1.

Notes

1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field

Hx = 3 kA/m.

2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for

decrease of sensitivity.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

180

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCC

bridge supply voltage

−

magnetic ﬁeld strength

−2

−+2

kA/m

sensitivity

open circuit, notes 2 and 3

3.2

−

4.8

TCVO

temperature coefﬁcient of

output voltage

VCC =5V;

Tj = −25 to +125 °C

−−0.4

−

%/K

IB = 3 mA;

Tj = −25 to +125 °C

−−0.1

−

%/K

Rbridge

bridge resistance

1.6

−

2.6

Ω

TCRbridge temperature coefﬁcient of

bridge resistance

Tbridge = −25 to +125 °C

−

0.3

−

%/K

Voffset

offset voltage

−1.5

−

+1.5

mV/V

TCVoffset

offset voltage drift

Tj = −25 to +125 °C

−3

−+3

linearity deviation of output

voltage

Hy =0to ±1 kA/m

−−±0.5

⋅FS

Hy =0to ±1.6 kA/m

−−±1.7

⋅FS

Hy =0to ±2 kA/m

−−±2%⋅FS

hysteresis of output voltage

−−

0.5

⋅FS

operating frequency

−

MHz

mV V

⁄

kA m

⁄

-----------------

µVV

⁄

---------------

O at Hy

1.6 kA m

⁄

()

O at Hy

()

–

1.6

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