2000 Apr 18

2

Philips Semiconductors

Preliminary specification

Magnetic field sensor

KMZ41

DESCRIPTION

The KMZ41 is a sensitive magnetic field sensor,

employing the magnetoresistive effect of thin-film

permalloy. The sensor contains two galvanic separated

Wheatstone bridges. Its properties enable this sensor to

be used in angle measurement applications under strong

field conditions. A rotating magnetic field

strength > 40 kA/m (recommended field

strength > 100 kA/m) in the x-y plane will deliver a

sinusoidal output signal. The sensor can be operated at

any frequency between DC and 1 MHz.

PINNING

PIN

SYMBOL

DESCRIPTION

1

output voltage bridge 1

2

−V

O2

output voltage bridge 2

supply voltage bridge 2

supply voltage bridge 1

output voltage bridge 1

output voltage bridge 2

7

GND2

ground 2

8

GND1

ground 1

Fig.1 Simplified outline SOT96-1.

handbook, halfpage

4

1

5

8

MGD790

pin 1

index

x

y

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

bridge supply voltage

−

59V

bridge supply voltage

−

59V

S

sensitivity (

α

2.44

2.72

3.00

mV/

°

bridge resistance

2

2.5

3

k

Ω

offset voltage

−2

−

+2

mV/V

offset voltage

−2

−

+2

mV/V