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2SA73 Datasheet(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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2SA73 Datasheet(HTML) 2 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -5μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V Collector cut-off current ICBO VCB=-60 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA DC current gain hFE VCE=-6V, IC= -1mA 120 475 hFE VCE=-6V, IC= -0.1mA 40 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.18 -0.3 V Base-emitter saturation voltage VBE(on) VCE=-6V, IC= -1.0mA -0.58 -0.62 -0.68 V Transition frequency fT VCE=-6V, IC= -10mA f=30MHz 50 MHz Collector Output Capacitance Cob VCE=-10V, IE= 0 f=1MHz 4.5 7 pf Noise Figure NF VCE=-6V, IC= -0.3mA Rg=10kΩ; f=100Hz 6 20 dB CLASSIFICATION OF hFE Rank L H Range 120-220 220-475 www.umw-ic.com 2 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW 2SA73 |
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