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2SC3265 Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

Part # 2SC3265
Description  SOT-23 Plastic-Encapsulate Transistors
PDF  3 Pages
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Manufacturer  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

2SC3265 Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

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SOT-23 Plastic-Encapsulate Transistors
2SC3265
TRANSISTOR (NPN)
FEATURES
High DC current gain
Complementary to KTA1298
MAXIMUM RATINGS (Ta=25
unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
800
mA
PC
Collector Power Dissipation
200
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=30 V, IE=0
0.1
μA
Collector cut-off current
IEBO
VEB=5 V, IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC= 100mA
100
320
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=20mA
0.5
V
base-emitter voltage
VBE
VCE=1V,IC=10mA
0.5
0.8
V
Transition frequency
fT
VCE=5V, IC=10mA
f=100MHz
120
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHZ
13
pF
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
160-320
Marking
EO
EY
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
℃
UMW
R
UMW 2SC3265
1
www.umw-ic.com
友台半导体有限公司


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