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BC847PN Datasheet(PDF) 2 Page - Diodes Incorporated

Part # BC847PN
Description  COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847PN Datasheet(HTML) 2 Page - Diodes Incorporated

  BC847PN Datasheet HTML 1Page - Diodes Incorporated BC847PN Datasheet HTML 2Page - Diodes Incorporated BC847PN Datasheet HTML 3Page - Diodes Incorporated BC847PN Datasheet HTML 4Page - Diodes Incorporated  
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DS30278 Rev. 8 - 2
2 of 4
BC847PN
www.diodes.com
Electrical Characteristics
NPN BC847B Section
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
V(BR)CBO
50
—
—
V
IC = 10
µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3)
V(BR)CEO
45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3)
V(BR)EBO
6
—
—
V
IE = 1
µA, IC = 0
DC Current Gain (Note 3)
hFE
200
290
450
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
VCE(SAT)
—
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3)
VBE(ON)
580
—
660
—
700
720
mV
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
Collector-Cutoff Current (Note 3)
ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
—
3.5
6.0
pF
VCB = 10V, f = 1.0MHz
Noise Figure
NF
—
2.0
10
dB
VCE = 5V, IC = 200µA,
RG = 2.0k
Ω,
f = 1.0kHz,
∆f = 200Hz
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
V(BR)CBO
-50
—
—
V
IC = 10
µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3)
V(BR)CEO
-45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3)
V(BR)EBO
-5
—
—
V
IE = 1
µA, IC = 0
DC Current Gain (Note 3)
hFE
220
290
475
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
VCE(SAT)
—
-75
-250
-300
-650
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3)
VBE(SAT)
—
-700
-850
—
-950
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3)
VBE(ON)
-600
—
-650
—
-750
-820
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 3)
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product
fT
100
200
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
—
3
4.5
pF
VCB = 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
VCE = 5V, IC = 200µA,
RG = 2.0k
Ω,
f = 1.0kHz,
∆f = 200Hz
Electrical Characteristics
PNP BC857B Section
@ TA = 25°C unless otherwise specified
Ordering Information (Note 4)
Device
Packaging
Shipping
BC847PN-7-F
SOT-363
3000/Tape & Reel
Notes: 3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.



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