1

Dual P-Channel

20 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

-

20

0.

at VGS = - 4.5V

-

4.0

2.7 nC

0.

100 at V

GS = - 2.5 V

-

3.2

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

S2

G2

D2

P-Channel MOSFET

S1

G1

D1

P-Channel MOSFET

Notes:

a. TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 150 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-

20

V

Gate-Source Voltage

VGS

±

12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-

4.0

A

TC = 70 °C

-

3.3

TA = 25 °C

-

3.6b, c

TA = 70 °C

-

3.1b, c

Pulsed Drain Current

IDM

- 12

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.17

TA = 25 °C

- 0.95b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.4

W

TC = 70 °C

0.9

TA = 25 °C

1.14b, c

TA = 70 °C

0.73b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 5 s

RthJA

93

110

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

75

90

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Applications

•

Battery Switch for Portable Devices

•

Computers

- Bus Switch

- Load Switch

WST2011

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