DS30366 Rev. 6 - 2

2 of 4

BSS123

www.diodes.com

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage

100

¾

¾

V

Zero Gate Voltage Drain Current

¾

¾

1.0

10

µA

nA

Gate-Body Leakage, Forward

¾

¾

50

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

0.8

1.4

2.0

V

Static Drain-Source On-Resistance

¾

¾

¾

¾

6.0

10

W

Forward Transconductance

80

370

¾

mS

Drain-Source Diode Forward Voltage

¾

0.84

1.3

V

DYNAMIC CHARACTERISTICS

Input Capacitance

¾

29

60

pF

f = 1.0MHz

Output Capacitance

¾

10

15

pF

Reverse Transfer Capacitance

¾

2

6

pF

SWITCHING CHARACTERISTICS

Turn-On Rise Time

¾

¾

8

ns

Turn-Off Fall Time

¾

¾

16

ns

Turn-On Delay Time

¾

¾

8

ns

Turn-Off Delay Time

¾

¾

13

ns

Electrical Characteristics

Note:

3. Short duration test pulse used to minimize self-heating effect.

0

0.2

0.7

0

1

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 On-Region Characteristics

V

= 4V

GS

2

0.6

0.5

0.1

0.3

0.4

V

= 3V

GS

V

= 10, 7, 6, 5V

GS

0.8

1.2

1.6

0.1

0.2

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Current

V

= 4V

GS

2.0

2.4

0.3

0.4

0.5

0.6

V

= 3V

GS

V

= 5, 6, 7, 10V

GS