AM29F200B_01 datasheet(2/11 Pages) AMD

2 / 11 page

SUPPLEMENT

Publication# 21257

Rev: D Amendment/+4

Issue Date: June 27, 2001

Am29F200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

— Minimizes system level power requirements

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F200A device

■ High performance

— 70, 90, or 120 ns access time

■ Low power consumption

— 20 mA typical active read current (byte mode)

— 28 mA typical active read current for

(word mode)

— 30 mA typical program/erase current

— 1 µA typical standby current

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— Superior inadvertent write protection

■ Data# Polling and Toggle Bit

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Hardware method for detection of program or

erase cycle completion

■ Erase Suspend/Resume

— Supports reading data from a sector not being

erased

■ Hardware RESET# pin

— Resets internal state machine to the reading

array data

■ 20-year data retention at 125°C

■ Tested to datasheet specifications at

temperature

— Contact AMD for higher temperature range

devices

■ Quality and reliability levels equivalent to

standard packaged components

■ Shipped in waffle pack, surftape, and unsawn

wafer

■ 500 µm die/wafer thickness

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