LLE18010X datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistor

LLE18010X

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tmb = 25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common emitter class AB ampliﬁer.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

0.2

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

µA

V(BR)CER

collector-emitter breakdown voltage

IC = 1 mA; RBE = 220 Ω

−

V(BR)CBO

collector-base breakdown voltage

IC = 1 mA

−

V(BR)EBO

emitter-base breakdown voltage

IE = 0.5 mA

−

hFE

DC current gain

IC = 125 mA; VCE = 5 V

150

MODE OF

OPERATION

(GHz)

VCE

(V)

ICQ

(mA)

PL1

(W)

Gpo

(dB)

ηC

(%)

Zi; ZL

(

Ω)

Class AB

(CW)

1.85

≥1

typ. 1.5

≥8.5

typ. 10

typ. 40

see Figs 6 and 7

1.65

typ. 2

typ. 11

typ. 47

see Figs 6 and 7

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