AM29F800B datasheet(43/44 Pages) AMD

43 / 44 page

November 2, 2006 21504E5

Am29F800B

D A TA SH EE T

REVISION SUMMARY

Revision A (August 1997)

Initial release.

Revision B (October 1997)

Global

Added -55 speed option. Changed data sheet designa-

tion from Advance Information to Preliminary.

Sector Protection/Unprotection

Corrected text to indicate that these functions can only

be implemented using programming equipment.

Table 1, Device Bus Operations

Revised to indicate inputs for both CE# and RESET#

are required for standby mode.

Program Command Sequence

Changed to indicate Data# Polling is active for 2 µs

after a program command sequence if the sector spec-

ified is protected.

Sector Erase Command Sequence and DQ3: Sector

Erase Timer

Corrected sector erase timeout to 50 µs.

Erase Suspend Command

Changed to indicate that the device suspends the

erase operation a maximum of 20 µs after the rising

edge of WE#.

DC Characteristics

Changed to indicate VID min and max values are 11.5

to 12.5 V, with a VCC test condition of 5.0 V. Added

typical values to TTL table. Revised CMOS typical

standby current (ICC3).

Figure 14: Chip/Sector Erase Operation Timings;

Figure 19: Alternate CE# Controlled Write

Operation TImings

Corrected hexadecimal values in address and data

waveforms. In Figure 19, corrected data values for chip

and sector erase.

Erase and Programming Performance

Corrected word and chip programming times.

Revision C (January 1998)

Global

Formatted for consistency with other 5.0 volt-only

data sheets.

Revision C+1 (April 1998)

Distinctive Characteristics

Changed typical program/erase current to 30 mA to

match the CMOS DC Characteristics table.

Changed minimum endurance to 1 million write cycles

per sector guaranteed.

AC Characteristics

Erase/Program Operations: Corrected the notes refer-

ence for tWHWH1 and tWHWH2. These parameters are

100% tested. Changed tDS and tCP specifications for 55

ns device. Changed tWHWH1 word mode specification

to 12 µs.

Alternate CE# Controlled Erase/Program Operations:

Corrected the notes reference for tWHWH1 and tWHWH2.

These parameters are 100% tested. Changed tDS and

tCP specifications for 55 ns device. Changed tWHWH1

word mode specification to 12 µs.

Temporary Sector Unprotect Table

Added note reference for tVIDR. This parameter is not

100% tested.

Erase and Programming Performance

In Notes 1 and 6, changed the endurance specification

to 1 million cycles.

Revision C+2 (April 1998)

Product Selector Guide

Deleted the -55 speed option for VCC = 5.0 V ± 5%.

Added the -55 speed option for VCC = 5.0 V ± 10%.

Ordering Information

Va lid Combinations fo r Am29F800BT-5 5 and

Am29F800BB-55: Added the extended temperature

range for all package types.

Operating Ranges

VCC Supply Voltages: Deleted “VCC for ± 5% devices .

. . . +4.75 V to +5.25 V”. Changed “VCC for ±10%

devices . . . . +4.5 V to +5.5 V” to “VCC for all devices .

. . . +4.5 V to +5.5 V”.

Erase and Programming Performance

Note 2: Deleted “(4.75 V for -55)”.

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