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SS52BGF Datasheet(PDF) 2 Page - UN Semiconducctor INC |
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SS52BGF Datasheet(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 SS52BGF~SS520BGF Surface Mount Schottky Barrier Rectifier Electrical Characteristics Curves Fig. 2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve Fig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig. 6 Typical Transient Thermal Impedance Fig. 4 Typical Junction Capacitance 1.0 2.0 3.0 4.0 5.0 6.0 0 0 25 50 75 100 125 Case Temperature (°C) 150 20 40 60 80 0 T =25 J ° C T =100 J ° C Percent of Rated Peak Reverse Voltage(%) 100 100 101 102 103 104 T =75 J ° C Instaneous Forward Voltage (V) 0.1 0 0.5 1 10 1.0 1.5 2.0 20 SS52BGF/SS54BGF SS56BGF/SS58BGF SS510BGF/SS520BGF Reverse Voltage (V) 10 0.1 10 100 500 20 100 1 1000 T =25 J ° C SS54F/SS520F SS52BGF/SS54BGF SS56BGF~SS520BGF 10 100 Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 1 40 00 100 140 20 60 120 80 0.01 100 1 10 100 t, Pulse Duration(sec) 0.1 1 10 |
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